Answers are grounded in this paper and cite their sources.
The thermal degradation of the Ta/sub 2/ O/sub 5/ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta/sub 2/O/sub 5/ with the TiN top electrode was found to be the oxidation of TiN. By placing a poly-Si layer between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850/spl deg/C. The Ta/sub 2/O/sub 5/ capacitor with the TiN/poly-Si top electrode was integrated into 256-Mbit DRAM cells and excellent leakage current characteristics were obtained.
No takes yet. Share an insight, caveat, or question.
Kwon et al. (1996) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: