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September 1, 1996IEEE Electron Device Letters

Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing DRAM dielectric

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Authors

YMY. MatsuiYokogawa Electric (Japan)KTKazuyoshi ToriiTokushima UniversityMHMasaki HirayamaOsaka Prefecture University

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Matsui et al. (1996) studied this question.

synapsesocial.com/papers/6a70123226a7f98052dc9604https://doi.org/10.1109/55.536283
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  4. 4Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°C1983 · 81 citations
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