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We examined the electronic-state characteristics of direct-contact HfO 2 /Si interfaces to study the origin of interface dipole. The interface state densities, time constants, and broadening parameters extracted by ac-conductance spectroscopy did not reveal any correlation with the flat-band voltage shifts caused by the interface dipole. We propose that the dipole is not associated with interface-state-related charge transfer, but possibly with chemical-bonding polarization.
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Miyata et al. (2009) studied this question.
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