Answers are grounded in this paper and cite their sources.
In situ x-ray photoelectron spectroscopy revealed that initial Si oxidation at the HfO2∕Si(001) interface in O2 proceeds in a two-step manner with an initial slow stage followed by a fast one. This transition in the oxidation process is most likely caused by crystallization of the HfO2 film. The first stage at 400–600°C exhibited postdeposition annealing conditions suitable for suppressing the interfacial Si oxide in a monolayer region.
No takes yet. Share an insight, caveat, or question.
Noriyuki Miyata (2006) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: