Results are presented that testify to an increase in the thermal stability and structural and electrical properties of films obtained via plasma-stimulated atomic layer deposition (PEALD). The films are of 20 nm ferroelectric HfO2 and Hf0.5Zr0.5O2, with and without inserts of Al2O3 monolayers in metal–ferroelectric–silicon mesa structures, that are promising for universal memory devices.
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Popov et al. (2023) studied this question.
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