( Ta 1−x Nb x ) 2 O 5 films produced by atomic layer deposition: Temperature dependent dielectric spectroscopy and room-temperature I–V characteristics

Temperature dependent ac dielectric spectroscopy and room-temperature I–V characterization were performed on atomic layer deposited (Ta1−xNbx)2O5 films. The high frequency permittivity, as well as the dc conductivity of the films, were found to increase with increasing Nb content. The conduction mechanism in the mixed Ta–Nb oxide films was of the Poole–Frenkel type, while the high field conduction in pure Ta2O5 was space-charge limited. The activation energy for dc conduction was higher in mixed Ta–Nb oxides compared to pure Ta2O5 and Nb2O5 films. Irreversible changes in the conduction mechanism took place upon heat treatment above a certain irreversibility temperature. This temperature was higher for the mixed oxides than for the binary ones.