An up-date is given on the use of ferroelectric (FE) thin films in memory devices, both as passive capacitors in dynamic random access memories (DRAMs) and as the memory itself in nonvolatile switching devices (both destructive-read-out NV-FRAMs and nondestructive-read-out ferroelectric-gated FETs – field effect transistors).
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J. F. Scott (2000) studied this question.
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