Field-effect devices utilizing LaAlO3-SrTiO3 interfaces

Using LaAlO3-SrTiO3 bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers’ n-type interfaces as drain-source channels and the LaAlO3 layers as gate dielectrics. With gate voltages well below 1 V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100 °C.