Conductive Oxide Interfaces for Field Effect Devices

The discovery of 2D conductivity at the interface of insulating oxides uncovered a trove of rich correlated‐electron physics, whose origins are still being debated 15 years later. In parallel to the massive research thrust into the fundamentals of these phenomena, the past decade has seen dramatic progress in harnessing this system toward practical devices. This report summarizes the physical background of the interface phenomena, and presents the recent evolution of field effect devices based on conductive oxide interfaces. The discussion is built on progressive examples of device concepts, covering a wide range of oxide material systems. The role of defects is critically interwoven throughout the narrative. The promises and hurdles toward practical large‐scale implementation of these devices are highlighted at the conclusion. This report is intended to bridge between the physics of conductive oxide interfaces and the practicalities of developing them into device technology. By presenting an overview of the state of the art, it is hoped to inspire new applications for these diverse new capabilities. The journey of conductive oxide interfaces from fundamentals to technology may be viewed as a prototype for the future maturation of other systems of emergent physics and novel materials from labs to devices.