The application of ion beam bevel sectioning and post‐sputter etch treatment in Auger crater‐edge profiling

A method of Auger crater‐edge profiling is described that uses electronic contouring of the ion beam from a focused ion source for the sputter formation of bevelled cross‐sections. Vanishingly shallow angles can be produced by this method, allowing high lateral magnification of layered structures with in‐depth resolution equal to the best obtainable by conventional Auger profiling. The many advantages of this approach are discussed, together with details of a new approach for improving in‐depth resolution. This entails post‐treatment of the sputter‐formed bevel using low‐energy sputtering and chemically assisted reactive ion beam etching. The methods are demonstrated using samples of buried SiO 2 in Si and InP/GaInAs superlattice structures.