Zinc oxide films were grown in a temperature range of 75 – 150 ° C by plasma-enhanced ALD for the application of flexible transparent thin-film transistor (TFT). We have investigated the effect of precursor pulsing time, temperature, and radio frequency power on the film growth. The X-ray diffraction patterns of polycrystalline ZnO films showed rather preferred (002) orientation even at a low temperature of 150 ° C . We could obtain highly resistant ZnO film, being suitable for the active layer of TFT, at low temperature with the reactive oxygen plasma to result in decreased carrier density.
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Park et al. (2006) studied this question.
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