Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 4, 2016IEEE Transactions on Electron Devices

High-Mobility and Good-Stability Thin-Film Transistors With Scandium-Substituted Indium Oxide Semiconductors

View Full Paper
Ask AI
Bookmark
Share

Authors

WSWei SongElectric Power Research InstituteLLLinfeng LanSouth China University of TechnologyPXPeng XiaoCentral South University of Forestry and Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Song et al. (2016) studied this question.

synapsesocial.com/papers/6a8a91afeeed409805de922dhttps://doi.org/10.1109/ted.2016.2612690
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors2016 · 93 citations
  2. 2High‐mobility flexible thin‐film transistors with a low‐temperature zirconium‐doped indium oxide channel layer2016 · 18 citations
  3. 3Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantation1994 · 92 citations
  4. 4Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors2014 · 84 citations
  5. 5Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability2014 · 105 citations