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April 29, 2016physica status solidi (RRL) - Rapid Research Letters

High‐mobility flexible thin‐film transistors with a low‐temperature zirconium‐doped indium oxide channel layer

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PXPeng XiaoCentral South University of Forestry and TechnologyTDTing DongQingdao UniversityLLLinfeng LanAdvanced Materials and Devices (United States)

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Xiao et al. (2016) studied this question.

synapsesocial.com/papers/6a84695fbaf48c4c4c8d6945https://doi.org/10.1002/pssr.201600052
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