Low-temperature materials and thin-film transistors for electronics on flexible substrates

The deposition processes and electronic properties of thin-film semiconductors and insulators based on silicon in relation to the fabrication of electronic devices on flexible plastic substrates are considered. The films of amorphous hydrogenated silicon ( a -Si:H), nanocrystalline silicon ( nc -Si), and amorphous silicon nitride ( a -SiN x ), and also thin-film transistors are fabricated at comparatively low temperatures (120°C, 75°C) using existing commercial plasma-chemical equipment. The parameters of thin-film transistors based on a -Si:H and fabricated at the aforementioned relatively low temperatures are compatible with those of high-temperature analogues.