The 30 ns pulsed XeCl excimer laser annealing of silicon films with an average thickness of 2.2 nm formed on quartz substrates is reported. Crystallization occurred at laser energies between 150 and 170 mJ/cm 2 . Raman scattering spectra revealed the mixed states of small crystalline grains, and nanocrystalline and disordered amorphous regions. The amorphization of the silicon films was observed for laser irradiation above 180 mJ/cm 2 . Photoluminescence was observed around at approximately 3 and 2 eV from 18 to 130 K for the films annealed at 260 °C for 3 h in 1.3 × 10 6 Pa H 2 O vapor after laser irradiation at 170 mJ/cm 2 .
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Sameshima et al. (2006) studied this question.
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