Electrical properties of laser chemically doped silicon

The electrical properties of single-crystal and amorphous Si, doped using a pulsed UV laser, have been studied as a function of laser wavelength and fluence and of UV dose. BCl3 or PCl3 parent gases were used to provide B or P dopant atoms. Dissociation of molecules adsorbed on the Si surface can supplement photolysis of gas-phase molecules as a source of doping atoms.