All-oxide pin-diodes with the ferroelectric BaTiO3 i-layer were prepared on (100) Nb-doped SrTiO3 substrates by the pulsed laser deposition method and ion mesa-etching. The p- and n-layers, respectively, consisted of (LaSr)MnO3 and (LaSr)TiO3. The current–voltage (I–V) curves exhibited the built-in voltage of about 0.3 V and the reverse leakage current was about -1 µA at the voltage of -8 V. Due to the ferroelectricity of BaTiO3, the I–V curves revealed the hysteretic characteristics even when the electron was injected into the conduction band of the BaTiO3 layer, suggesting that the remanent polarization inside the BaTiO3 i-layer is not eliminated even under the coexistence of the excess carriers (electrons) injected.
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Nakasaka et al. (2001) studied this question.
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