An analytical expression for phonon-limited electron mobility in silicon-inversion layers

A complete Monte Carlo study of phonon-limited electron mobility in (100) silicon-inversion layers has been carried out. It has been determined advantageous to consider more than three energy subbands for electron motion. First-order intervalley scattering has also been shown to play an important role in ohmic transport. The results of the Monte Carlo simulation can be fitted by a simple analytical expression that coincides with the phonon-limited mobility for the bulk in the zero transverse-electric-field limit.