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Reflectivity spectra of HgSe with various carrier concentrations are measured in the spectral region from 80 to 600 cm−;1 at 6, 80, and 300 K. Their features are well explained by the theoretical dynamic dielectric function including the dispersive interband part. This part is evaluated using Kane's model of band structure. The properties of an additional mode observed in zero gap semiconductors can be well explained by means of two‐phonon resonant process.
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Witowski et al. (1980) studied this question.
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