An n-channel accumulation-type field-effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 104 and a field-effect mobility of 0.4 cm2/V s at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field-effect mobility was almost temperature independent down to 200 K. Our results indicate that the Al2O3/KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.
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