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January 1, 1998Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations

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Authors

HNHideo NamatsuNTT (Japan)YTYasuo TakahashiHokkaido University of ScienceKYKenji YamazakiTwitter (United States)

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Namatsu et al. (1998) studied this question.

synapsesocial.com/papers/6a8a99150f137e402b339dd7https://doi.org/10.1116/1.589837
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  5. 5Resolution Limits of PMMA Resist for Exposure with 50 kV Electrons1981 · 115 citations