Enhanced radiative recombination in a periodically nanoengineered silicon- on-insulator structure (see figure and cover) is studied using micro-Raman, photoluminescence, and photocurrent spectroscopies. It is shown that the enhancement is due to phonon- localization effects, leading to a relaxation of the fundamental k-selection rule disfavoring light emission in bulk silicon.
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Cloutier et al. (2006) studied this question.
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