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Indium nanowires are grown on InGaN substrates at an ultrafast rate by using direct irradiation by a focused ion beam (see figure). The diameter and length of the synthesized nanowires, as well as their growth rate, can be effectively controlled by selecting the energy of the ion beam. Nanowires are synthesized on selected areas of the substrate by controlling the regions exposed to the ion beam using maskless patterning.
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Oh et al. (2008) studied this question.
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