Bipolar hysteretic resistance switching in epitaxial Fe/V/MgO/Fe magnetic tunnel junctions is observed in highly reproducible $I(V)$ curves and found to be modified by the frequency of the bias voltage sweep. Observation of slow relaxation of the resistance state values is reported. A model is proposed that takes into account the incidence of time-dependent electric-field-induced migration of atomic species on the effective barrier thickness. This model provides a good qualitative agreement with experimental data.
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Najjari et al. (2010) studied this question.
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