We have measured for the first time the velocity of minority-carrier electrons in a heavily doped (p = 2×1018 cm−3) molecular beam epitaxy grown compositionally graded (0.12 eV/μm) AlxGa1−x As layer. The drift velocity is determined to be ve = 2.3×106 cm/s in a quasi-electric field of 1.2 kV/cm.
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Levine et al. (1982) studied this question.
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