Anomalous Hall effect and magnetoresistance of (FexSn1−x)1−y(SiO2)yfilms

Structural, magnetic and transport properties were investigated for heterogeneous (Fe x Sn 1− x ) 1− y (SiO 2 ) y films deposited on oxidized silicon substrates at room temperature with RF magnetron sputtering. X-ray diffraction indicated that the films consist of a nanocrystalline phase of FeSn 2 embedded into an amorphous background. For (Fe x Sn 1− x ) 92.33 (SiO 2 ) 7.67 , it was demonstrated that with the increase in the Fe component an evolution from negative isotropic magnetoresistance (MR) behaviour to one with a mixture of anisotropic magnetoresistance and isotropic negative MR occurs. On fixing the SiO 2 percentage and decreasing the Fe–Sn ratio, the negative transverse MR first increases and then decreases. For samples having a fixed Fe–Sn ratio, the negative transverse MR increases with the increase in SiO 2 . Compared with the Fe–Sn system, the addition of 7.67 at.% SiO 2 enhances the saturated Hall resistivity. Further increase in SiO 2 introduces a complicated saturated Hall resistivity dependence on the concentration of SiO 2 .