Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
March 15, 1982Applied Physics Letters

Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloys

View Full Paper
Ask AI
Bookmark
Share

Authors

RTRaphael TsuUniversity of North Carolina at CharlotteJGJ. González‐HernándezUniversity of AlmeríaSCS. S. ChaoDevon Energy (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Tsu et al. (1982) studied this question.

synapsesocial.com/papers/6a8aa834186271ac9933725fhttps://doi.org/10.1063/1.93133
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Critical Density in Percolation Processes1970 · 908 citations
  2. 2Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering1977 · 1,649 citations
  3. 3Evidence of Voids Within the As-Deposited Structure of Glassy Silicon1969 · 361 citations
  4. 4Vibrational properties of amorphous Si and Ge1975 · 344 citations
  5. 5Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide1969 · 443 citations