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Chemical vapor deposition of silicon nitride film has been studied by using SiH4 and NH2CH3 as source gases for the deposition temperature region of 700∼900°C. The deposition rate was somewhat larger than that of the case using SiH4 and NH3 gases. The film deposited at 900°C had a particularly smooth specular surface.
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Yasui et al. (1989) studied this question.
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