Microcrystalline silicon carbide films were grown by hydrogen-radical-enhanced chemical vapor deposition in magnetic field. Tetramethylsilane was used as source material. Hydrogen radicals were generated by microwave plasma in magnetic field. Microcrystalline films grew on the Si substrate by supplying hydrogen radicals at temperatures higher than 250° C. The structure and the crystallinity of SiC films were investigated by cross-section transmission electron microscopy, electron probe microanalysis and X-ray photoelectron spectroscopy.
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Yasui et al. (1994) studied this question.
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