Photoluminescence and electron spin resonance measurements were carried out on amorphous silicon-carbon alloy film containing both F and H (a-Si1-xCx: (F, H)) prepared by the glow discharge decomposition of a mixture of SiH4and CF4gas. The a-Si1-xCx:(F, H) film, which had a wide optical gap (about 2.8 eV) had a smaller spin density and a photoluminescence with a higher intensity at room temperature and with a weaker temperature dependence than the a-Si1-xCx:H film with a similar optical gap. The temperature-independent photoluminescence appears to be due to an increase in the width of the band tail caused by the incorporation of F atoms.
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Morimoto et al. (1983) studied this question.
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