Local Transient Simulations of Feed Rod Melting During Floating-Zone Silicon Crystal Growth

The present study demonstrates the use of a transient multiphase flow model for the description of feed rod melting dynamics during the floating-zone silicon crystal growth process on a local scale. The presented numerical model is verified using a previously introduced analytical model of the thin melt layer on the open melting front. An artificial increase in viscosity on the liquid–gas boundary is used to minimize numerical effects, and good agreement with the analytical model is achieved in the system parameter range that describes a typical growth process. Simulations with a precise interface shape show that a stable solution is achieved in cases with different initial melt distributions, showcasing the re-establishment of melt flow after the thin melt layer breaks. The influence of flow rate fluctuations is investigated, and the obtained stable solution is maintained in the majority of the considered cases.