Review reveals versatile phase modulation and harmonic generation in deep ultraviolet metasurfaces, suggesting a path toward ultra-compact semiconductor lithography optics.
The high photon energy of ultraviolet (UV) radiation has enabled extensive applications in medical research, sterilization, environmental protection, and semiconductor manufacturing. This is particularly evident in semiconductor lithography, where deep UV (DUV) and extreme UV (EUV) optical systems are used for high-resolution patterning. However, conventional DUV and EUV optics, relying on refractive or reflective elements, are usually bulky, single-functional, and costly. Metasurfaces, as two-dimensional subwavelength nanostructures, offer a promising alternative with advantages in compactness, multifunctionality, and high integration. While metasurfaces have been demonstrated from visible to terahertz regimes, research is rapidly expanding into the DUV and EUV spectra. In this paper, recent advancements in optical metasurfaces operating within the DUV and EUV regimes are comprehensively reviewed, encompassing key functionalities such as phase modulation, polarization control, near-field enhancement, and harmonic generation. The underlying manipulation mechanisms are systematically explored, and the core challenges in short-wavelength operation are analyzed. Finally, perspectives on the future development directions for DUV and EUV metasurfaces are provided to facilitate the transition from laboratory-scale validation to practical applications.
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Liang et al. (2026) studied this question.
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