Periodic stimulation of a growth instability on (001) vicinal surfaces of InP and InGaAs induces a corrugated growth interface. When this interface is incorporated into a superlattice the two-dimensional quantum well coalesces into a periodic structure comprised of InGaAs filaments buried in an InP matrix. We have measured the transport in this system by contactless submillimeter wave spectroscopy and show that the electron motion is confined to these filaments, and we have determined the electron density and mobility in these submicrometer filaments.
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Allen et al. (1989) studied this question.
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