Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 × 1015 to 2 × 1016 B/cm2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 °C and holding times at Tmax of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 °C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed.
No takes yet. Share an insight, caveat, or question.
Guimarães et al. (1986) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: