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Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors, S L Rumyantsev, N Pala, M S Shur, R Gaska, M E Levinshtein, P A Ivanov, M Asif Khan, G Simin, X Hu, J Yang
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Rumyantsev et al. (2002) studied this question.
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