Gate-voltage dependence of low-frequency noiseinGaN/AlGaN heterostructure field-effect transistors

The gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors has been investigated in the linear and subsaturation regions. Analysis of experimental data for different transistors indicates that for all examined biases the noise spectrum is dominated by the channel noise rather than noise originating in the series resistors. The obtained results shed new light on the noise sources and may lead to improvements in the noise performance of GaN transistors.