Formation of thin silicon oxide films by rapid thermal heating

Rapid thermal heating of silicon samples in a dry O2 ambient has been used to form thin SiO2 films. Compared to conventional furnace oxidation, an increased growth rate was observed which is linearly dependent on the square root of time. Activation energies of 1.99 and 2.26 eV for 〈111〉 and 〈100〉 orientation, respectively, have been determined in the range 1000–1200 °C.