Thermal Oxidation of Silicon in Dry Oxygen: Accurate Determination of the Kinetic Rate Constants

Based upon the linear‐parabolic growth model of silicon oxidation, accurate kinetic rate constants are determined for (100), (111), and (110) silicon oxidized in dry oxygen in the 800°–1000°C range. The oxide growth was monitored by high temperature automated in situ ellipsometry. It is shown that fitting the maximum number of oxidation data points to a linear‐parabolic relationship yields accurate oxidation rate constants that are unique to the oxidation process as described in the Deal‐Grove model, and not just good empirical fitting parameters. This approach is denoted the “optimum X i technique.” Both linear and parabolic rate constants exhibit a break in their activation energies at 950°C. This behavior is discussed and interpreted in terms of the viscoelastic properties of SiO 2 .