We report the first direct determination of the temperature dependence of the mobility edge Ec from internal photoemission measurements on a-Si Schottky barriers. A simultaneous measurement of the dc conductivity allows us to estimate the statistical shift of the Fermi level EF. For undoped material, we find dEcdT=8×10^-4eV/K and dEFdT=3×10^-4eV/K.
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Premachandran et al. (1984) studied this question.
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