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Various types of phase shifting mask, off-axis illumination, optical proximity correction and other innovations promise to extend the lifetime of i-line (365 nm) and deep ultra-violet (DUV) optical lithography technologies into the subhalf-micron era. No single innovation seems likely to produce a patterning paradigm that lasts more than one generation, but engineering solutions using combinations of new options and familiar technologies may make optical technology viable well into the next century.
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M. D. Levenson (1994) studied this question.
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