Polycrystalline silicon (poly-Si) materials are passivated using atomic hydrogen generated by an rf plasma. The infrared (IR) spectra of hydrogenated samples are studied for a wide range of substrate temperatures and hydrogen gas pressure. The vibrational spectra display modes at 650 and 2040 cm−1 which can be characterized as predominantly hydrogen motions. Analysis of these modes show association with. the SiH bonds. The effect of hydrogen on the photovoltaic properties of poly-Si-metal-insulator-semiconductor solar cells is also studied. Solar cell characteristics are significantly improved after passivation of the grain boundaries for previously annealed Wacker poly-Si. The detrimental effects of annealing the as-received Wacker poly-Si samples are also discussed.
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Rao et al. (1982) studied this question.
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