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The static and dynamical characteristics of semiconductor narrowband tunable resonant optical amplifiers as active filters and receivers are theoretically studied. Device performance at different cavity length, electrical bias level, incoming signal level, frequency detuning, and signal bandwidth is calculated for both amplitude-shift keyed and frequency-shift keyed input. Nonlinear dynamical effects under high-Q conditions and high input power are also discussed. Through the coupled field and carrier dynamics, the amplifier response can be monitored by the amplifier terminal voltage. The calculations are compared with experimental results where the amplifier is used as tunable receiver.>
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Choa et al. (1991) studied this question.
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