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A new method of Zn diffusion into InP using dimethyl-zinc(DMZ) as a Zn source is described. This diffusion method provides precise control over both diffusion depth and Zn concentration, and is easier to use and gives highly reproducible results. Diffusions were carried out from 400 to 570°C with the Zn surface concentration of 1017 to 1018 cm-3, and diffusion depth of 0.2 to 2 µm. The diffusion profiles were measured by SIMS analysis and electrolytic etching with simultaneous C-V measurement.
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Wada et al. (1989) studied this question.
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