Diffusion of Zn or Cd in n-type III-V material has been extensively used for forming p-n junctions in lasers and detectors. However, if the substrate material used for diffusion has an electron concentration less than 5×1016 cm−3, two separate diffusion fronts will appear which alter completely the electrical property of the junction. We have investigated this phenomenon by electron beam induced current (EBIC) and secondary ion mass spectroscopy (SIMS). A theory is proposed, for the first time, in good agreement with experiment.
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Yamada et al. (1983) studied this question.
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