Rapid thermal diffusion of Zn into n-type GaAs0.6P0.4 from Zn-doped oxide films

Rapid thermal diffusion (RTD) of Zn into n-type GaAs0.6 P0.4 from Zn-doped oxide films using tungsten halogen lamps was successfully used to fabricate p+n junctions. RTD was performed in the temperature range 910–1080 °C for 9 s, and the heating rates were varied in the range 10–83 °C/s. The RTD of Zn was also carried out from (Zn,Ga)- and (Zn,P)-doped oxide films to study the diffusion mechanism. The Zn diffusion by RTD occurs through an interstitial-substitutional diffusion mechanism similar to the conventional furnace processing. However, the RTD of Zn was enhanced with the heating rate, especially at 83 °C/s. This was ascribed to the stress field induced in the heating stage. Electrical characteristics of fabricated diodes are presented.