Transient diffusion doping in Si

Short-term diffusion cycles ∼10 s are shown to be suitable for shallow junction formation in silicon. Phosphorus diffused from a surface film source can produce shallow 1000–2000 Å layers that have surface doping ≳1020 cm−3. No diffusion enhancement, such as is often associated with similar cycle implantation annealing, has been encountered and layer depths follow the customary square root of time dependence.