Strongly bound chemisorption state for benzene on silicon (111)

Dramatic differences were observed between the room-temperature reactivity of benzene on cleaved Si and on cleaved Ge and GaAs with synchrotron-radiation photoemission. No evidence of benzene adsorption was observed on Ge or GaAs. On Si we unexpectedly observed a strongly bound state, probably due to the formation of phenylic-like C–Si bonds.