Fatigue Characteristics of SrBi2Ta2O9 Thin Films by RF Magnetron Sputtering Method

Ferroelectric SrBi2Ta2O9 thin films were synthesized on various substrates, such as MgO(100), glass, Pd/MgO(100) and Pd/glass by the rf magnetron sputtering method. Single-phase thin films were prepared on these substrates using a target with the starting chemical composition of SrCO3:Bi2O3:Ta2O5=0.7:1.2:1. At the higher substrate temperature of 1073 K, (h 0 l) orientation was found. The hysteresis loop of the thin film on Pd(100)/MgO(100) substrate did not change up to 109 switching cycles. These properties are very attractive for nonvolatile memory application.