Matrix Addressable Micro-Pixel 280 nm Deep UV Light-Emitting Diodes

We report the fabrication and characterization of a 10 × 10 matrix addressable micro-pixel AlGaN-based deep UV light-emitting diodes (LEDs) with emission at 280 nm. Deep reactive ion etching and benzocyclobutene dielectric deposition were used for pixel isolation and planarization prior to the electrode grid metallization. A comparative study of devices with interconnected and individually controlled pixels is also presented to show the viability of scaling up.