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Growth of high-quality single-crystal AlGaAs nanowires was demonstrated using the vapor–liquid–solid (VLS) mechanism with molecular-beam epitaxy (MBE). Highly ordered AlGaAs nanowire arrays and GaAs∕AlGaAs multilayer nanowires were also prepared. Photoluminescence (PL) from homogeneous AlGaAs and GaAs∕AlGaAs multilayer nanowires was measured. The Al composition of the AlGaAs nanowires was found to be significantly lower than that for planar MBE films grown under the same conditions, as determined from PL and energy-dispersive x-ray spectroscopy measurements. This is explained in terms of the different growth mechanisms for VLS and normal MBE. Such AlGaAs nanowires are expected to have a wide range of applications in electronic and photonic devices.
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Wu et al. (2004) studied this question.
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